The growth and application of thin films grown by Atomic Layer Deposition (ALD). Atomic layer deposition (ALD) can be considered to be a special kind of chemical vapor deposition (CVD) which can grow films with high uniformity and excellent conformity. In our work, we paid a lot of attention to the use of the ALD technique to grow ZnO, TiO2, Al2O3 and HfO2 films and heterogeneous multilayers, so that we have built the basic ideas about growing the different films for different devices.
For growing the single material film, we have obtained new insights into the growth mechanisms, and the detailed effects of growth parameters on film characteristics like film growth rate, the surface structure evolution, density changes as a function of deposition temperature and impurity distribution. The highlight of my work is that we have successfully used an isotopic method to trace the film growth and identify the impurity origin. For example, the hydrogen from water oxidant. We sought electrochemical means to deliberately invoke proton transport in the multilayer.